FQD2N100TF

MOSFET 1000V N-Channel QFET

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SeekIC No. : 00161990 Detail

FQD2N100TF: MOSFET 1000V N-Channel QFET

floor Price/Ceiling Price

Part Number:
FQD2N100TF
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 1.6 A
Resistance Drain-Source RDS (on) : 7.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Continuous Drain Current : 1.6 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 7.1 Ohms


Parameters:

Technical/Catalog InformationFQD2N100TF
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C1.6A
Rds On (Max) @ Id, Vgs9 Ohm @ 800mA, 10V
Input Capacitance (Ciss) @ Vds 520pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs15.5nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD2N100TF
FQD2N100TF



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