FQD2N30TM

MOSFET N-CH/300V/1.66A/3.7OHM

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FQD2N30TM Picture
SeekIC No. : 00161765 Detail

FQD2N30TM: MOSFET N-CH/300V/1.66A/3.7OHM

floor Price/Ceiling Price

Part Number:
FQD2N30TM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 1.7 A
Resistance Drain-Source RDS (on) : 3.7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Continuous Drain Current : 1.7 A
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 3.7 Ohms


Parameters:

Technical/Catalog InformationFQD2N30TM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C1.7A
Rds On (Max) @ Id, Vgs3.7 Ohm @ 850mA, 10V
Input Capacitance (Ciss) @ Vds 130pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs5nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD2N30TM
FQD2N30TM



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