FQD2N60CTF_F080

MOSFET Trans MOS N-Ch 600V 1.9A 3-Pin 2+Tab

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SeekIC No. : 00160814 Detail

FQD2N60CTF_F080: MOSFET Trans MOS N-Ch 600V 1.9A 3-Pin 2+Tab

floor Price/Ceiling Price

Part Number:
FQD2N60CTF_F080
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 1.9 A
Resistance Drain-Source RDS (on) : 4.7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 4.7 Ohms
Continuous Drain Current : 1.9 A


Parameters:

Technical/Catalog InformationFQD2N60CTF_F080
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C1.9A
Rds On (Max) @ Id, Vgs4.7 Ohm @ 950mA, 10V
Input Capacitance (Ciss) @ Vds 235pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs12nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD2N60CTF_F080
FQD2N60CTF_F080



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