FQD7N10TM

MOSFET 100V N-Ch QFET

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SeekIC No. : 00159828 Detail

FQD7N10TM: MOSFET 100V N-Ch QFET

floor Price/Ceiling Price

Part Number:
FQD7N10TM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 5.8 A
Resistance Drain-Source RDS (on) : 0.35 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 5.8 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.35 Ohms


Parameters:

Technical/Catalog InformationFQD7N10TM
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C5.8A
Rds On (Max) @ Id, Vgs350 mOhm @ 2.9A, 10V
Input Capacitance (Ciss) @ Vds 250pF @ 25V
Power - Max2.5W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs7.5nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD7N10TM
FQD7N10TM
FQD7N10TMDKR ND
FQD7N10TMDKRND
FQD7N10TMDKR



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