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FQE10N20CTU

MOSFET 200V N-Channel Adv Q-FET C-Series

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SeekIC No. : 00159796 Detail

FQE10N20CTU: MOSFET 200V N-Channel Adv Q-FET C-Series

FQE10N20CTU Data Sheet

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Part Number:
FQE10N20CTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 0.36 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-126 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 0.36 Ohms
Package / Case : TO-126


Parameters:

Technical/Catalog InformationFQE10N20CTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs360 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 510pF @ 25V
Power - Max12.8W
PackagingTube
Gate Charge (Qg) @ Vgs26nC @ 10V
Package / CaseTO-126
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQE10N20CTU
FQE10N20CTU



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