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FQE10N20LCTU

MOSFET N-CH 200V 4A TO-126

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SeekIC No. : 003432534 Detail

FQE10N20LCTU: MOSFET N-CH 200V 4A TO-126

FQE10N20LCTU Data Sheet

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Part Number:
FQE10N20LCTU
Mfg:
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: QFET™ Manufacturer: Fairchild Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 4A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 360 mOhm @ 2A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) @ Vgs: 19nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 490pF @ 25V
Power - Max: 12.8W Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Current - Continuous Drain (Id) @ 25° C: 4A
Vgs(th) (Max) @ Id: 2V @ 250µA
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) @ Vds: 490pF @ 25V
Packaging: Tube
Mounting Type: Through Hole
Manufacturer: Fairchild Semiconductor
Series: QFET™
Gate Charge (Qg) @ Vgs: 19nC @ 5V
Rds On (Max) @ Id, Vgs: 360 mOhm @ 2A, 10V
Power - Max: 12.8W
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126


Parameters:

Technical/Catalog InformationFQE10N20LCTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs360 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 490pF @ 25V
Power - Max12.8W
PackagingTube
Gate Charge (Qg) @ Vgs19nC @ 5V
Package / CaseTO-126
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQE10N20LCTU
FQE10N20LCTU



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