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FQI13N06TU

MOSFET 60V N-Channel QFET

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SeekIC No. : 00161241 Detail

FQI13N06TU: MOSFET 60V N-Channel QFET

FQI13N06TU Data Sheet

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Part Number:
FQI13N06TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.105 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Package / Case : I2PAK
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.105 Ohms
Gate-Source Breakdown Voltage : +/- 25 V


Parameters:

Technical/Catalog InformationFQI13N06TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C13A
Rds On (Max) @ Id, Vgs135 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds 310pF @ 25V
Power - Max3.75W
PackagingTube
Gate Charge (Qg) @ Vgs7.5nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI13N06TU
FQI13N06TU



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