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FQI15P12TU: MOSFET P-CH/120V/15A/QFET

FQI15P12TU Data Sheet

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Part Number:: FQI15P12TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/30

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What is this?

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Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 120 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	- 15 A
Resistance Drain-Source RDS (on) :	0.17 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	I2PAK	Packaging :	Tube

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : I2PAK
Resistance Drain-Source RDS (on) : 0.17 Ohms
Continuous Drain Current : - 15 A
Drain-Source Breakdown Voltage : - 120 V

Parameters:

Technical/Catalog Information	FQI15P12TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	120V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	200 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds	1100pF @ 25V
Power - Max	3.75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQI15P12TU FQI15P12TU

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