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FQI19N20TU: MOSFET 200V N-Channel QFET

FQI19N20TU Data Sheet

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Part Number:: FQI19N20TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/30

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What is this?

FQI10N20C evaluate
Features: • 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V• Low gate charge ( typical 20 nC)&#...
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MOSFET N-CH/200V/10A/QFET
FQI10N20L evaluate
Features: • 10A, 200V, RDS(on) = 0.36 @VGS = 10 V• Low gate charge ( typical 13 nC)...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	19.4 A
Resistance Drain-Source RDS (on) :	0.12 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-262	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-262
Continuous Drain Current : 19.4 A
Resistance Drain-Source RDS (on) : 0.12 Ohms

Parameters:

Technical/Catalog Information	FQI19N20TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	19.4A
Rds On (Max) @ Id, Vgs	150 mOhm @ 9.7A, 10V
Input Capacitance (Ciss) @ Vds	1600pF @ 25V
Power - Max	3.13W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQI19N20TU FQI19N20TU

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FQI19N20TU

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