FQI19N20TU Selling Leads, Price trend , Fairchild Semiconductor, FQI19N20TU DataSheet download, circuit diagram from SeekIC.com

See larger image

SeekIC No. : 00162219 Detail

FQI19N20TU: MOSFET 200V N-Channel QFET

FQI19N20TU Data Sheet

Get Latest Price

Part Number:: FQI19N20TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2025/12/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

FQI10N20C evaluate
Features: • 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V• Low gate charge ( typical 20 nC)&#...
FQI10N20CTU evaluate
MOSFET N-CH/200V/10A/QFET
FQI10N20L evaluate
Features: • 10A, 200V, RDS(on) = 0.36 @VGS = 10 V• Low gate charge ( typical 13 nC)...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	19.4 A
Resistance Drain-Source RDS (on) :	0.12 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-262	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-262
Continuous Drain Current : 19.4 A
Resistance Drain-Source RDS (on) : 0.12 Ohms

Parameters:

Technical/Catalog Information	FQI19N20TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	19.4A
Rds On (Max) @ Id, Vgs	150 mOhm @ 9.7A, 10V
Input Capacitance (Ciss) @ Vds	1600pF @ 25V
Power - Max	3.13W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQI19N20TU FQI19N20TU

Customers Who Bought This Item Also Bought

BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details
ARDUINO IIC/I2C 液晶模块，IGBT
US $$4.50 - 4.80 / Piece

Supply Ability:100Day

View details
DS-4008HCI English version video capture card Hai Kang
US $$120.00 - 120.00 / Piece

Supply Ability:120Week

View details
2DI300A-050 MODULE
US $$30.00 - 30.00 / Piece

Supply Ability:100Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

FQI19N20TU

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Quick Details

Description

Customers Who Bought This Item Also Bought

Switches(5620)

Resistors(1299)

Optoelectronics(3638)

Power Supplies - External/Internal (Off-Board)(631)

Potentiometers, Variable Resistors(1370)

Discrete Semiconductor Products(7459)