FQI28N15 Selling Leads, Price trend, FQI28N15 DataSheet download, circuit diagram from SeekIC.com

Features: • 28A, 150V, RDS(on) = 0.09 @VGS = 10 V• Low gate charge ( typical 40 nC)• Low Crss ( typical 50 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol Pa...

See larger image

SeekIC No. : 004343268 Detail

FQI28N15: Features: • 28A, 150V, RDS(on) = 0.09 @VGS = 10 V• Low gate charge ( typical 40 nC)• Low Crss ( typical 50 pF)• Fast switching• 100% avalanche tested• Improved dv...

FQI28N15 Data Sheet

Get Latest Price

Part Number:: FQI28N15
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/5/6

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Product Details

Description

Features:

• 28A, 150V, RDS(on) = 0.09 @VGS = 10 V
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

Specifications

Symbol	Parameter		FQB28N15 / FQI28N15	Units
V_DSS	Drain-Source Voltage		150	V
I_D	Drain Current	- Continuous (TC =25°C)	28	A
I_D	Drain Current	- Continuous (TC = 100°C)	19.8	A
I_DM	Drain Current Pulsed (Note 1)		112	A
V_GSS	Gate-Source Voltage		±25	V
E_AS	Single Pulsed Avalanche Energy (Note 2)		300	mJ
I_AR	Avalanche Current (Note 1)		28	A
E_AR	Repetitive Avalanche Energy (Note 1)		16..8	mJ
d _v/dt	Peak Diode Recovery dv/dt (Note 3)		5.5	V/ns
P_D	Power Dissipation (TA = 25°C)		3.75	W
	Power Dissipation (TC = 25°C)		168	W
	- Derate above 25°C		1.12	W/°C
T_{J, TSTG}	Operating and Storage Temperature Range		-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds		300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQI28N15 are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
avalanche and commutation modes. FQI28N15 is well suited for low voltage applications such as audio amplifiers, high efficiency switching for DC/DC converte

FQI28N15

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Inductors, Coils, Chokes(1216)

Undefined Category(248)

Tapes, Adhesives(300)

Optoelectronics(3638)

Industrial Controls, Meters(3690)

Transformers(1503)