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FQI32N12V2TU

MOSFET 120V N-Ch Adv QFET V2 series

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SeekIC No. : 00161892 Detail

FQI32N12V2TU: MOSFET 120V N-Ch Adv QFET V2 series

FQI32N12V2TU Data Sheet

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Part Number:
FQI32N12V2TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 120 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 0.05 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : I2PAK
Drain-Source Breakdown Voltage : 120 V
Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 0.05 Ohms


Parameters:

Technical/Catalog InformationFQI32N12V2TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25° C32A
Rds On (Max) @ Id, Vgs50 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 1860pF @ 25V
Power - Max3.75W
PackagingTube
Gate Charge (Qg) @ Vgs53nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI32N12V2TU
FQI32N12V2TU



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