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FQI3N30TU

MOSFET 300V N-Channel QFET

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SeekIC No. : 00163351 Detail

FQI3N30TU: MOSFET 300V N-Channel QFET

FQI3N30TU Data Sheet

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Part Number:
FQI3N30TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3.2 A
Resistance Drain-Source RDS (on) : 1.65 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : I2PAK
Resistance Drain-Source RDS (on) : 1.65 Ohms
Continuous Drain Current : 3.2 A
Drain-Source Breakdown Voltage : 300 V


Parameters:

Technical/Catalog InformationFQI3N30TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C3.2A
Rds On (Max) @ Id, Vgs2.2 Ohm @ 1.6A, 10V
Input Capacitance (Ciss) @ Vds 230pF @ 25V
Power - Max3.13W
PackagingTube
Gate Charge (Qg) @ Vgs7nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI3N30TU
FQI3N30TU



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