FQI3P20TU, US $ .28-.61 , Fairchild Semiconductor, FQI3P20TU DataSheet download, circuit diagram from SeekIC.com

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FQI3P20TU: MOSFET

FQI3P20TU Data Sheet

US $ .28~.61 / Piece | Get Latest Price

Part Number:: FQI3P20TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/30

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Recent History
What is this?

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MOSFET

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 200 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	2.8 A
Resistance Drain-Source RDS (on) :	2.7 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	I2PAK	Packaging :	Tube

Description

Configuration : Single
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : I2PAK
Continuous Drain Current : 2.8 A
Resistance Drain-Source RDS (on) : 2.7 Ohms
Drain-Source Breakdown Voltage : - 200 V

Parameters:

Technical/Catalog Information	FQI3P20TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	2.8A
Rds On (Max) @ Id, Vgs	2.7 Ohm @ 1.4A, 10V
Input Capacitance (Ciss) @ Vds	250pF @ 25V
Power - Max	3.13W
Packaging	Tube
Gate Charge (Qg) @ Vgs	8nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQI3P20TU FQI3P20TU

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FQI3P20TU

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