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FQI47P06TU

MOSFET 60V P-Channel QFET

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SeekIC No. : 00162723 Detail

FQI47P06TU: MOSFET 60V P-Channel QFET

FQI47P06TU Data Sheet

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Part Number:
FQI47P06TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : - 47 A
Resistance Drain-Source RDS (on) : 0.026 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 25 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.026 Ohms
Continuous Drain Current : - 47 A


Parameters:

Technical/Catalog InformationFQI47P06TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C47A
Rds On (Max) @ Id, Vgs26 mOhm @ 23.5A, 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max3.75W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI47P06TU
FQI47P06TU



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