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FQI4P40

Features: • -3.5A, -400V, RDS(on) = 3.1Ω @VGS = -10 V• Low gate charge ( typical 18 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB4P40 / FQI4P40 Units VDSS...

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SeekIC No. : 004343297 Detail

FQI4P40: Features: • -3.5A, -400V, RDS(on) = 3.1Ω @VGS = -10 V• Low gate charge ( typical 18 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• I...

FQI4P40 Data Sheet

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Part Number:
FQI4P40
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• -3.5A, -400V, RDS(on) = 3.1Ω @VGS = -10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB4P40 / FQI4P40
Units
VDSS Drain-Source Voltage
-400
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
-3.5
A
-2.2
A
IDM Drain Current - Pulsed (Note 1)
-14
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
260
mJ
IAR Avalanche Current (Note 1)
-3.5
A
EAR Repetitive Avalanche Energy (Note 1)
8.5
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
-4.5
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
85
W
0.68
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These P-Channel enhancement mode power field effect transistors of FQI4P40 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQI4P40 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQI4P40 is well suited for electronic lamp ballast based on complimentary half bridge.




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