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FQI4P40TU

MOSFET 400V P-Channel QFET

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SeekIC No. : 00159926 Detail

FQI4P40TU: MOSFET 400V P-Channel QFET

FQI4P40TU Data Sheet

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Part Number:
FQI4P40TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : - 3.5 A
Resistance Drain-Source RDS (on) : 3.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-262
Drain-Source Breakdown Voltage : - 400 V
Continuous Drain Current : - 3.5 A
Resistance Drain-Source RDS (on) : 3.1 Ohms


Parameters:

Technical/Catalog InformationFQI4P40TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25° C3.5A
Rds On (Max) @ Id, Vgs3.1 Ohm @ 1.75A, 10V
Input Capacitance (Ciss) @ Vds 680pF @ 25V
Power - Max3.13W
PackagingTube
Gate Charge (Qg) @ Vgs23nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI4P40TU
FQI4P40TU



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