FQI50N06LTU

MOSFET 60V N-Channel QFET Logic Level

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FQI50N06LTU: MOSFET 60V N-Channel QFET Logic Level

floor Price/Ceiling Price

US $ .49~1 / Piece | Get Latest Price
Part Number:
FQI50N06LTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
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  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1
  • $.83
  • $.59
  • $.49
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 52.4 A
Resistance Drain-Source RDS (on) : 0.021 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Package / Case : I2PAK
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.021 Ohms
Continuous Drain Current : 52.4 A


Parameters:

Technical/Catalog InformationFQI50N06LTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C52.4A
Rds On (Max) @ Id, Vgs21 mOhm @ 26.2A, 10V
Input Capacitance (Ciss) @ Vds 1630pF @ 25V
Power - Max3.75W
PackagingTube
Gate Charge (Qg) @ Vgs32nC @ 5V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI50N06LTU
FQI50N06LTU



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