FQI50N06TU, US $ .61-.98 , Fairchild Semiconductor, FQI50N06TU DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00146973 Detail

FQI50N06TU: MOSFET 60V N-Channel QFET

FQI50N06TU Data Sheet

US $ .61~.98 / Piece | Get Latest Price

Part Number:: FQI50N06TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/27

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What is this?

FQI50N06 evaluate
Features: • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V• Low gate charge ( typical 31...
FQI50N06L evaluate
Features: • 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V• Low gate charge ( typical ...
FQI50N06LTU evaluate
US $.49 - 1 / Piece

MOSFET 60V N-Channel QFET Logic Level

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	60 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	50 A
Resistance Drain-Source RDS (on) :	0.022 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-262	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.022 Ohms

Parameters:

Technical/Catalog Information	FQI50N06TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	22 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	1540pF @ 25V
Power - Max	3.75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	41nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQI50N06TU FQI50N06TU

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