Features: • 55A, 60V, RDS(on) = 0.020Ω @VGS = 10 V• Low gate charge ( typical 35 nC)• Low Crss ( typical 85 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol P...
FQI55N06: Features: • 55A, 60V, RDS(on) = 0.020Ω @VGS = 10 V• Low gate charge ( typical 35 nC)• Low Crss ( typical 85 pF)• Fast switching• 100% avalanche tested• Impr...
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| Symbol | Parameter |
FQB55N06 / FQI55N06 |
Units |
| VDSS | Drain-Source Voltage |
60 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
55 |
A |
|
38.9 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
220 |
A |
| VGSS | Gate-Source Voltage |
±25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
545 |
mJ |
| IAR | Avalanche Current (Note 1) |
55 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
13.3 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
133 |
W | |
|
0.89 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors of FQI55N06 are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQI55N06 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQI55N06 is well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.