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FQN1N50CBU

MOSFET N-CH/400V/5 A/.75OHM

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SeekIC No. : 00163667 Detail

FQN1N50CBU: MOSFET N-CH/400V/5 A/.75OHM

FQN1N50CBU Data Sheet

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Part Number:
FQN1N50CBU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.38 A
Resistance Drain-Source RDS (on) : 6000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92-3 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Resistance Drain-Source RDS (on) : 6000 mOhms
Continuous Drain Current : 0.38 A
Package / Case : TO-92-3


Parameters:

Technical/Catalog InformationFQN1N50CBU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C380mA
Rds On (Max) @ Id, Vgs6 Ohm @ 190mA, 10V
Input Capacitance (Ciss) @ Vds 195pF @ 25V
Power - Max890mW
PackagingBulk
Gate Charge (Qg) @ Vgs6.4nC @ 10V
Package / CaseTO-92
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQN1N50CBU
FQN1N50CBU



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