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MFG:FSC  Package Cooled:TO-92  D/C:08+  

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Part Number: FQN1N60C

 

MFG: FSC

Package Cooled: TO-92

D/C: 08+

Description: These N-Channel enhancement mode power field effect transistors&nb...


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FQN1N60C General Description


These  N-Channel  enhancement  mode  power  field  effect transistors  are  produced  using  Fairchild’ proprietary,  planar stripe,  DMOS technology.

This  advanced  technology  has  been  especially  tailored  to minimize  on-state  resistance,  provide  superior  switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency  switched  mode  power  supplies,  active  power  factor correction,  electronic  lamp  ballasts  based  on  half  bridge topology.

FQN1N60C Maximum Ratings

Symbol Parameter
FQN1N60C
Units
VDSS Drain-Source Voltage
600
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
0.3
A
0.18
A
IDM Drain Current - Pulsed (Note 1)
1.2
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
33
mJ
IAR Avalanche Current (Note 1)
0.3
A
EAR Repetitive Avalanche Energy (Note 1)
0.3
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TA = 25°C) *
1
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
3
W
0.02
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C

FQN1N60C Features

·0.3 A, 600 V, RDS(on) = 11.5 Ω @ VGS = 10 V
· Low gate charge ( typical 4.8 nC )
· Low Crss ( typical 3.5 pF)
· Fast switching
· 100 % avalanche tested
· Improved dv/dt capability

FQN1N60C datasheet

FQN1N60C
PDF/DataSheet Download

  • Datasheet: FQN1N60C
  • File Size: 693385 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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