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MFG:FSC Package Cooled:TO-92 D/C:08+


Part Number: FQN1N60C
MFG: FSC
Package Cooled: TO-92
D/C: 08+
Description: These N-Channel enhancement mode power field effect transistors&nb...
MFG:FSC Package Cooled:TO-92 D/C:08+


MFG: FSC
Package Cooled: TO-92
D/C: 08+
Description: These N-Channel enhancement mode power field effect transistors&nb...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
| Symbol | Parameter |
FQN1N60C |
Units |
| VDSS | Drain-Source Voltage |
600 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
0.3 |
A |
|
0.18 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
1.2 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
33 |
mJ |
| IAR | Avalanche Current (Note 1) |
0.3 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
0.3 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
1 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
3 |
W | |
|
0.02 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQN1N60C
PDF/DataSheet Download
