FQP45N03L

Transistor Polarity : N-Channel
Configuration : Single
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.018 Ohms
Continuous Drain Current : 41 A


Features:

• 45A, 30V, R_DS(on) = 0.018 @V_GS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 105 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQP45N03L	Units
VDSS	Drain-Source Voltage	30	V
ID	Drain Current                  - Continuous (TC = 25°C)                                       - Continuous (TC = 100°C)	45	A
		31.8	A
IDM	Drain Current                 - Pulsed       (Note 1)	180	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy        (Note 2)	200	mJ
IAR	Avalanche Current                             (Note 1)	45	A
EAR	Repetitive Avalanche Energy             (Note 1)	7.5	mJ
dv/dt	Peak Diode Recovery dv/dt                (Note 3)	7.0	V/ns
PD	Power Dissipation     (TC = 25°C)                                   - Derate above 25°C	75	W
		0.5	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQP45N03L are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQP45N03L has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP45N03L is well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.