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FQP44N10F

MOSFET N-CH/100V/43 .5A/0.039OHM

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SeekIC No. : 00163875 Detail

FQP44N10F: MOSFET N-CH/100V/43 .5A/0.039OHM

FQP44N10F Data Sheet

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Part Number:
FQP44N10F
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 43.5 A
Resistance Drain-Source RDS (on) : 0.039 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.039 Ohms
Continuous Drain Current : 43.5 A


Parameters:

Technical/Catalog InformationFQP44N10F
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C43.5A
Rds On (Max) @ Id, Vgs39 mOhm @ 21.75A, 10V
Input Capacitance (Ciss) @ Vds 1800pF @ 25V
Power - Max146W
PackagingTube
Gate Charge (Qg) @ Vgs62nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP44N10F
FQP44N10F



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