FQP50N06

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

* 50A, 60V, R_DS(on)= 0.022@V_GS = 10 V
* Low gate charge ( typical 31 nC)
* Low Crss ( typical 65 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating




Specifications

Symbol	Parameter	FQP50N06	Units
VDSS	Drain-Source Voltage	60	V
ID	Drain Current - Continuous (TC = 25) - Continuous (TC = 100)	50	A
		35.4	A
IDM	Drain Current - Pulsed (Note 1)	200	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	490	mJ
IAR	Avalanche Current (Note 1)	50	A
EAR	Repetitive Avalanche Energy (Note 1)	12	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
PD	Power Dissipation (TC = 25) - Derate above 25	120	W
		0.8	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to +175
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

Description

The FQP50N06 is designed as one kind of 60V N-Channel MOSFET that is produced using Fairchild's proprietary, planar stripe, DMOS technology. Also FQP50N06 is well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Features of the FQP50N06 are:(1)50A, 60V, RDS(on) = 0.022?@VGS = 10 V; (2)Low gate charge ( typical 31 nC); (3)Low Crss ( typical 65 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)175°C maximum junction temperature rating.

The absolute maximum ratings of the FQP50N06 can be summarized as:(1)Drain-Source Voltage: 60 V;(2)Drain Current - Continuous (TC = 25°C): 50 A;(3)Drain Current - Continuous (TC = 100°C): 35.4 A;(4)Drain Current - Pulsed: 200 A;(5)Gate-Source Voltage: ±25 V;(6)Single Pulsed Avalanche Energy: 490 mJ;(7)Avalanche Current: 50 A;(8)Repetitive Avalanche Energy: 12 mJ;(9)Peak Diode Recovery dv/dt: 7.0 V/ns;(10)Operating and Storage Temperature Range: -55 to +175 °C.

The electrical characteristics of the FQP50N06 can be summarized as:(1)Drain-Source Breakdown Voltage: 60 V;(2)Breakdown Voltage Temperature Coefficient: 0.06 V/°C;(3)Zero Gate Voltage Drain Current: 1 A;(4)Gate-Body Leakage Current, Forward: 100 nA;(5)Gate-Body Leakage Current, Reverse: -100 nA. If you want to know more information such as the electrical characteristics about the FQP50N06, please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	FQP50N06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	22 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	1540pF @ 25V
Power - Max	120W
Packaging	Tube
Gate Charge (Qg) @ Vgs	41nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP50N06 FQP50N06