FQP55N06

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 55 A
Resistance Drain-Source RDS (on) : 0.02 Ohms


Features:

* 55A, 60V, R_DS(on) = 0.020 @V_GS = 10 V
* Low gate charge ( typical 35 nC)
* Low Crss ( typical  85 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQP55N06	Units
VDSS	Drain-Source Voltage	60	V
ID	Drain Current - Continuous (TC = 25) - Continuous (TC = 100)	55	A
		38.9	A
IDM	Drain Current - Pulsed (Note 1)	220	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	545	mJ
IAR	Avalanche Current (Note 1)	55	A
EAR	Repetitive Avalanche Energy (Note 1)	13.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
PD	Power Dissipation (TC = 25) - Derate above 25	133	W
		0.89	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to +175
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

Description

  These N-Channel enhancement mode power field effect transistors of FQP55N06 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

  This advanced technology FQP55N06 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP55N06 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Parameters:

Technical/Catalog Information	FQP55N06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	55A
Rds On (Max) @ Id, Vgs	20 mOhm @ 27.5A, 10V
Input Capacitance (Ciss) @ Vds	1690pF @ 25V
Power - Max	133W
Packaging	Tube
Gate Charge (Qg) @ Vgs	46nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP55N06 FQP55N06