FQP5P20

MOSFET 200V P-Channel QFET

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FQP5P20 Picture
SeekIC No. : 00161156 Detail

FQP5P20: MOSFET 200V P-Channel QFET

floor Price/Ceiling Price

Part Number:
FQP5P20
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/6

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 4.8 A
Resistance Drain-Source RDS (on) : 1.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 4.8 A
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.4 Ohms
Drain-Source Breakdown Voltage : - 200 V


Features:

• -4.8A, -200V, RDS(on) = 1.4Ω @VGS = -10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical  12 pF)
• Fast switching
• 100% avalanche tested



Specifications

Symbol
Parameter
      FQP5P20
Units
VDSS
Drain-Source Voltage
-200
V
ID
Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC  = 100°C)
-4.8
A
-3.04
A
IDM
Drain Current - Pulsed                (Note 1)
-19.2
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy (Note 2) 
330
mJ
IAR
Avalanche Current                      (Note 1)
-4.8
A
EAR
Repetitive Avalanche Energy      (Note 1)                                        
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt         (Note 3)
-5.5
V/ns
PD
Power Dissipation (TC = 25°C)
                           - Derate above 25°C
 
75
W
 
0.6
W/
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
°C



Description

These P-Channel enhancement mode power field effect transistors of FQP5P20 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology of FQP5P20 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP5P20 is well suited for high efficiency switching DC/DC converters.




Parameters:

Technical/Catalog InformationFQP5P20
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C4.8A
Rds On (Max) @ Id, Vgs1.4 Ohm @ 2.4A, 10V
Input Capacitance (Ciss) @ Vds 430pF @ 25V
Power - Max75W
PackagingTube
Gate Charge (Qg) @ Vgs13nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP5P20
FQP5P20



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