FQP6N45

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 6.2 A
Resistance Drain-Source RDS (on) : 1.1 Ohms
Drain-Source Breakdown Voltage : 450 V


Features:

• 6.2A, 450V, R_DS(on) = 1.1 @V_GS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQP6N45	Units
VDSS	Drain-Source Voltage	450	V
ID	Drain Current - Continuous (TC = 25)                       - Continuous (TC = 100)	6.2	A
		3.9	A
IDM	Drain Current - Pulsed                                    (Note 1)	25	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy                    (Note 2)	350	mJ
IAR	Avalanche Current                                         (Note 1)	6.2	A
EAR	Repetitive Avalanche Energy                         (Note 1)	9.8	mJ
dv/dt	Peak Diode Recovery dv/dt                           (Note 3)	4.5	V/ns
PD	Power Dissipation (TC = 25)          - Derate above 25	98	W
		0.78	W/
TJ , TSTG	Operating and Storage Temperature Range	-55 to +150
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

Description

These N-Channel enhancement mode power field effect transistors of FQP6N45 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQP6N45 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP6N45 is well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.