Purchase FQP6N60, In-stock FQP6N60 From SeekIC.
Package Cooled:2 D/C:TO220


Part Number: FQP6N60
Package Cooled: 2
D/C: TO220
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
Package Cooled:2 D/C:TO220


Package Cooled: 2
D/C: TO220
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
|
Symbol |
Parameter |
FQP6N60 |
Units |
| VDSS | Drain-Source Voltage |
600 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
6.2 |
A |
|
3.9 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
24.8 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
440 |
mJ |
| IAR | Avalanche Current (Note 1) |
6.2 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
13 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
130 |
W |
|
1.04 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55 to +175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQP6N60
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