MFG:F Package Cooled:TO-220 D/C:09+
MFG: F
Package Cooled: TO-220
D/C: 09+
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's ...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
| Symbol | Parameter | FQP6N80 | Units |
| VDSS | Drain-Source Voltage | 800 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC= 100) |
5.8 | A |
| 3.67 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 23.2 | A |
| VGSS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 680 | mJ |
| IAR | Avalanche Curren (Note 1) | 5.8 | A |
| EAR | Repetitive Avalanche Energy (Note 1) |
15.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.0 | V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
158 | W |
| 1.27 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 |
|
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
FQP6N80
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