MFG:FAI Package Cooled:TO220-3 D/C:03+
MFG: FAI
Package Cooled: TO220-3
D/C: 03+
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
| Symbol | Parameter |
FQP6N90C/FQPF6N90C |
Units | |
| VDSS | Drain-Source Voltage |
900 |
V | |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
6 |
6* |
A |
|
3.8 |
3.8* |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
24 |
24* |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
650 |
mJ | |
| IAR | Avalanche Current (Note 1) |
6 |
A | |
| EAR | Repetitive Avalanche Energy (Note 1) |
16.7 |
mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns | |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
167 |
56 |
W |
|
1.43 |
0.48 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
FQP6N90C
PDF/DataSheet Download
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