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MFG:FSC  D/C:06+  

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Part Number: FQP6P25

 

MFG: FSC

 

D/C: 06+

Description: These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...


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FQP6P25 General Description


These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.

FQP6P25 Maximum Ratings

Symbol
Parameter
FQP6P25
Units
VDSS
Drain-Source Voltage
-250
V
ID
Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC  = 100°C)
-6.0
A
-3.8
A
IDM
Drain Current - Pulsed          (Note 1)
-24
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy  (Note 2) 
540
mJ
IAR
Avalanche Current               (Note 1)
-6.0
A
EAR
Repetitive Avalanche Energy     (Note 1)                                        
9.0
mJ
dv/dt
Peak Diode Recovery dv/dt       (Note 3)
-5.5
V/ns
PD
Power Dissipation (TC = 25°C)
                           - Derate above 25°C
 
90
W
 
0.72
W/
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
°C

FQP6P25 Features

• -6.0A, -250V, RDS(on) = 1.1Ω @VGS = -10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical  20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQP6P25 datasheet

FQP6P25
PDF/DataSheet Download

  • Datasheet: FQP6P25
  • File Size: 521025 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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