Purchase FQP7N65C, In-stock FQP7N65C From SeekIC.


Part Number: FQP7N65C
Description: These N-Channel enhancement mode power field effect transistors are produced&...


Description: These N-Channel enhancement mode power field effect transistors are produced&...
| Symbol | Parameter | FQP7N65C | FQPF7N65C | Units |
| VDSS | Drain-Source Voltage | 650 | V | |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
7 | 7* | A |
| 4.2 | 4.2* | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 28 | 28* | A |
| VGSS | Gate-Source Voltage | ±30 | V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 212 | mJ | |
| IAR | Avalanche Current (Note 1) | 7 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 1.6 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 4.5 | V/ns | |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
160 | 52 |
W |
| 1.28 | 0.42 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | ||
| TL | Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds |
300 | ||
FQP7N65C
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