Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Drain-Source Breakdown Voltage
: 650 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: +/- 30 V
Continuous Drain Current
: 7 A
Resistance Drain-Source RDS (on)
: 1.4 Ohms
Features: ·7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V
·Low gate charge ( typical 28 nC)
·Low Crss ( typical 12 pF)
·Fast switching
·100% avalanche tested
·Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FQP7N65C |
FQPF7N65C |
Units |
| VDSS |
Drain-Source Voltage |
650 |
V |
| ID |
Drain Current - Continuous (TC = 25)
- Continuous (TC = 100) |
7 |
7* |
A |
| 4.2 |
4.2* |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
28 |
28* |
A |
| VGSS |
Gate-Source Voltage |
±30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
212 |
mJ |
| IAR |
Avalanche Current (Note 1) |
7 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
1.6 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD |
Power Dissipation (TC = 25)
- Derate above 25 |
160 |
52
|
W |
| 1.28 |
0.42 |
W/ |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
| TL |
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds |
300 |
|
DescriptionThese N-Channel enhancement mode power field effect transistors of FQP7N65C are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQP7N65C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP7N65C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parameters: | Technical/Catalog Information | FQP7N65C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 7A |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 3.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1245pF @ 25V |
| Power - Max | 160W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 36nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP7N65C
FQP7N65C
|
FQP7N65C Data Sheet
