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Part Number: FQP7N65C

 

 

 

 

Description: These N-Channel enhancement mode power field effect transistors are produced&...


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FQP7N65C General Description


These N-Channel  enhancement  mode  power  field  effect transistors  are  produced  using  Fairchild's  proprietary, planar stripe,  DMOS technology.

This advanced technology has been especially tailored to minimize  on-state  resistance,  provide  superior  switching performance,  and  withstand  high  energy  pulse  in  the avalanche and commutation mode. These devices are well suited  for  high  efficiency  switched  mode  power  supplies, active  power  factor  correction,  electronic  lamp  ballasts based on half bridge topology.

FQP7N65C Maximum Ratings

Symbol Parameter FQP7N65C FQPF7N65C Units
VDSS Drain-Source Voltage 650 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)
7 7* A
4.2 4.2* A
IDM Drain Current - Pulsed (Note 1) 28 28* A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 212 mJ
IAR Avalanche Current (Note 1) 7 A
EAR Repetitive Avalanche Energy (Note 1) 1.6 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25)
- Derate above 25
160 52
W
1.28 0.42 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
300

FQP7N65C Features

·7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V
·Low gate charge ( typical  28 nC)
·Low Crss ( typical  12 pF)
·Fast switching
·100% avalanche tested
·Improved dv/dt capability

FQP7N65C datasheet

FQP7N65C
PDF/DataSheet Download

  • Datasheet: FQP7N65C
  • File Size: 907887 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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