MFG:FSC Package Cooled:TO-220 D/C:04+
MFG: FSC
Package Cooled: TO-220
D/C: 04+
Description: These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters.
|
Symbol |
Parameter |
FQP7P20 |
Units |
|
VDSS |
Drain-Source Voltage |
-200 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
-7.3 |
A |
|
-4.6 |
A | ||
|
IDM |
Drain Current - Pulsed (Note 1) |
-29.2 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
570 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
-7.3 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
9.0 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
-5.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)- Derate above 25°C |
90 |
W |
|
0.72 |
W/°C | ||
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
FQP7P20
PDF/DataSheet Download
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