FQP7P20

MOSFET 200V P-Channel QFET

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FQP7P20 Picture
SeekIC No. : 00160640 Detail

FQP7P20: MOSFET 200V P-Channel QFET

floor Price/Ceiling Price

Part Number:
FQP7P20
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 7.3 A
Resistance Drain-Source RDS (on) : 0.69 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Continuous Drain Current : 7.3 A
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : - 200 V
Resistance Drain-Source RDS (on) : 0.69 Ohms


Features:

• -7.3A, 200V, RDS(on) = 0.69Ω @VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical  25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol
Parameter
FQP7P20
Units
VDSS
Drain-Source Voltage
-200
V
ID
Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC  = 100°C)
-7.3
A
-4.6
A
IDM
Drain Current - Pulsed (Note 1)
-29.2
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy (Note 2) 
570
mJ
IAR
Avalanche Current (Note 1)
-7.3
A
EAR
Repetitive Avalanche Energy (Note 1)                                        
9.0
mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3)
-5.5
V/ns
PD
Power Dissipation (TC = 25°C)- Derate above 25°C
90
W
0.72
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
°C




Description

These P-Channel enhancement mode power field effect transistors of FQP7P20 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology FQP7P20 is especially tailored to minimize on-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche and commutation modes. FQP7P20 is well suited for high efficiency switching DC/DC converters.  




Parameters:

Technical/Catalog InformationFQP7P20
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C7.3A
Rds On (Max) @ Id, Vgs690 mOhm @ 3.65A, 10V
Input Capacitance (Ciss) @ Vds 770pF @ 25V
Power - Max90W
PackagingTube
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP7P20
FQP7P20



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