MFG:FAIRCHILD Package Cooled:TO-220 D/C:05+
MFG: FAIRCHILD
Package Cooled: TO-220
D/C: 05+
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supply.
|
Symbol |
Parameter |
FQP8N25 |
Units |
|
VDSS |
Drain-Source Voltage |
250 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
8.0 |
A |
|
5.0 |
A | ||
|
IDM |
Drain Current - Pulsed (Note 1) |
32 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
120 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
8.0 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
8.7 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
87 |
W
|
|
0.69 |
W/ | ||
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
FQP8N25
PDF/DataSheet Download
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