Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220AB
Continuous Drain Current
: 7.5 A
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 600 V
Resistance Drain-Source RDS (on)
: 1.2 Ohms
Features: · 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
· Low gate charge ( typical 28 nC)
· Low Crss ( typical 12 pF)
· Fast switching
· 100% avalanche tested
· Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FQP8N60C |
FQP8N60C |
Units |
| VDSS |
Drain-Source Voltage |
600 |
V |
| ID |
Drain Current - Continuous (TC = 25)
- Continuous (TC = 100) |
7.5 |
7.5* |
A |
| 4.6 |
4.6* |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
30 |
30* |
A |
| VGSS |
Gate-Source Voltage |
±30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
230 |
mJ |
| IAR |
Avalanche Current (Note 1) |
7.5 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
14.7 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD |
Power Dissipation (TC = 25)
- Derate above 25 |
147 |
48
|
W |
| 1.18 |
0.38 |
W/ |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
| TL |
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds |
300 |
|
DescriptionThese N-Channel enhancement mode power field effect transistors of FQP8N60C are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQP8N60C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP8N60C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parameters: | Technical/Catalog Information | FQP8N60C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 7.5A |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3.75A, 10V |
| Input Capacitance (Ciss) @ Vds | 1255pF @ 25V |
| Power - Max | 147W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 36nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP8N60C
FQP8N60C
|
FQP8N60C Data Sheet
