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FQP9N15

MOSFET 150V N-Channel QFET

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SeekIC No. : 00163007 Detail

FQP9N15: MOSFET 150V N-Channel QFET

FQP9N15 Data Sheet

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Part Number:
FQP9N15
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Package / Case : TO-220
Continuous Drain Current : 9 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.4 Ohms


Parameters:

Technical/Catalog InformationFQP9N15
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs400 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds 410pF @ 25V
Power - Max75W
PackagingTube
Gate Charge (Qg) @ Vgs13nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP9N15
FQP9N15



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