FQP9N25

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 250 V
Resistance Drain-Source RDS (on) : 0.42 Ohms
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 9.4 A


Features:

• 9.4A, 250V, R _DS(ON)= 0.42Ω @V_GS = 10 V
• Low gate charge ( typical 15.5 nC)
• Low Crss ( typical 15 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability 


Specifications

Symbol	Parameter	FQP9N25	Units
VDSS	Drain-Source Voltage	250	V
ID	Drain Current - Continuous (TC = 25°C)                       - Continuous (TC  = 100°C)	9.4	A
		5.9	A
IDM	Drain Current - Pulsed          (Note 1)	37.6	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy  (Note 2)	165	mJ
IAR	Avalanche Current               (Note 1)	9.4	A
EAR	Repetitive Avalanche Energy     (Note 1)	9.0	mJ
dv/dt	Peak Diode Recovery dv/dt       (Note 3)	5.5	V/ns
PD	Power Dissipation (TC = 25°C)                            - Derate above 25°C	90	W
		0.72	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQP9N25 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology of FQP9N25 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP9N25 is well suited for high efficiency switching DC/DC converters,switch motor power supply.