FQP9N25CTSTU

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 8.8A
Drain to Source Voltage (Vdss): 250V
Gate Charge (Qg) @ Vgs: 35nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Power - Max: 74W
Input Capacitance (Ciss) @ Vds: 710pF @ 25V
Supplier Device Package: TO-220
Manufacturer: Fairchild Semiconductor
Series: QFET™
Rds On (Max) @ Id, Vgs: 430 mOhm @ 4.4A, 10V


Parameters:

Technical/Catalog Information	FQP9N25CTSTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	8.8A
Rds On (Max) @ Id, Vgs	430 mOhm @ 4.4A, 10V
Input Capacitance (Ciss) @ Vds	710pF @ 25V
Power - Max	74W
Packaging	Tube
Gate Charge (Qg) @ Vgs	35nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP9N25CTSTU FQP9N25CTSTU