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FQP9N50

MOSFET 500V N-Channel QFET

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SeekIC No. : 00162477 Detail

FQP9N50: MOSFET 500V N-Channel QFET

FQP9N50 Data Sheet

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Part Number:
FQP9N50
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.73 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.73 Ohms


Parameters:

Technical/Catalog InformationFQP9N50
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs730 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds 1450pF @ 25V
Power - Max147W
PackagingTube
Gate Charge (Qg) @ Vgs36nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP9N50
FQP9N50



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