FQP9N90C

MOSFET 900V N-Channel Adv Q-FET C-Series

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SeekIC No. : 00156068 Detail

FQP9N90C: MOSFET 900V N-Channel Adv Q-FET C-Series

floor Price/Ceiling Price

US $ .64~.86 / Piece | Get Latest Price
Part Number:
FQP9N90C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~580
  • 580~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.86
  • $.71
  • $.67
  • $.64
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 1.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 8 A
Drain-Source Breakdown Voltage : 900 V
Resistance Drain-Source RDS (on) : 1.4 Ohms


Features:

• 8.0 A, 900V, RDS(on) = 1.4 Ω @VGS = 10 V
• Low gate charge ( typical 45nC)
• Low Crss ( typical 14pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol Parameter FQP9N90C FQPF9N90C Units
VDSS Drain-Source Voltage 900 V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
8.0 8.0*
A
2.8 2.8* A
IDM Drain Current - Pulsed (Note 1) 32 32* A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 900 mJ
IAR Avalanche Current (Note 1) 8.0 A
EAR Repetitive Avalanche Energy (Note 1) 20.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns
PD Power Dissipation (TC = 25)
- Derate above 25
205 68 W
1.64 0.54 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8' from case for 5 seconds
300



Description

These N-Channel enhancement mode power field effect transistors of FQP9N90C are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQP9N90C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP9N90C is well suited for high efficiency switched mode power supplies.




Parameters:

Technical/Catalog InformationFQP9N90C
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs1.4 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 2730pF @ 25V
Power - Max205W
PackagingTube
Gate Charge (Qg) @ Vgs58nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP9N90C
FQP9N90C



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