FQPF12P20

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Continuous Drain Current : 7.3 A
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Resistance Drain-Source RDS (on) : 0.47 Ohms
Drain-Source Breakdown Voltage : - 200 V


Features:

• -7.3A, -200V, R_DS(on) = 0.47Ω @V_GS = -10 V
• Low gate charge ( typical 31 nC)
• Low C^rss ( typical  30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQPF12P20	Units
VDSS	Drain-Source Voltage	-200	V
ID	Drain Current - Continuous (TC = 25°C)                       - Continuous (TC  = 100°C)	-7.3	A
		-4.6	A
IDM	Drain Current - Pulsed                (Note 1)	-29.2	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	810	mJ
IAR	Avalanche Current                      (Note 1)	-7.3	A
EAR	Repetitive Avalanche Energy      (Note 1)	5.0	mJ
dv/dt	Peak Diode Recovery dv/dt         (Note 3)	-5.5	V/ns
PD	Power Dissipation (TC = 25°C)                            - Derate above 25°C	50	W
		0.4	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

Description

These P-Channel enhancement mode power field effect transistors of FQPF12P20 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology of FQPF12P20 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF12P20 is well suited for high efficiency switching DC/DC converters.

Parameters:

Technical/Catalog Information	FQPF12P20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	7.3A
Rds On (Max) @ Id, Vgs	470 mOhm @ 3.65A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 25V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF12P20 FQPF12P20