FQPF15P12

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 15 A
Package / Case : TO-220F
Resistance Drain-Source RDS (on) : 0.2 Ohms
Drain-Source Breakdown Voltage : - 120 V


Features:

• -15A, -120V, R_DS(on) = 0.2 @V_GS = -10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 110 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQP15P12	FQPF15P12	Units
VDSS	Drain-Source Voltage	-120		V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	-15	-15*	A
		-10.6	-10.6*	A
IDM	Drain Current - Pulsed (Note 1)	-60	-60*	A
VGSS	Gate-Source Voltage	± 30		V
EAS	Single Pulsed Avalanche Energy (Note 2)	1157		mJ
IAR	Avalanche Current (Note 1)	-15		A
EAR	Repetitive Avalanche Energy (Note 1)	10		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-5.0		V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	100	41	W
		0.67	0.27	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +175		°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300		°C

* Drain current limited by maximum junction temperature.
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6.0mH, I_AS = -15A, V_DD = -50V, R_G = 25 , Starting T_J = 25°C
3. I_SD -15A, di/dt 300A/s, V_DD BV_DSS, Starting T_J = 25°C


Description

These P-Channel enhancement mode power field effect transistors of FQPF15P12 are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF15P12 is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Parameters:

Technical/Catalog Information	FQPF15P12
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	120V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	200 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds	1100pF @ 25V
Power - Max	41W
Packaging	Tube
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF15P12 FQPF15P12