Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Drain-Source Breakdown Voltage
: 150 V
Package / Case
: TO-220F
Gate-Source Breakdown Voltage
: +/- 25 V
Resistance Drain-Source RDS (on)
: 0.16 Ohms
Continuous Drain Current
: 11.6 A
DescriptionThe FQPF16N15 is produced using fairchild's propristary, planar stripe, DMOS technology. The feature of FQPF16N15 are as follows: (1)11.6A, RDS = 0.16@VGS = 10V; (2)low gate charge; (3)low crss; (4)fast switching; (5)100% avalanche tested; (6)improved dv/dt capability; (7)175 maximum junction temperature rating.
The absolute maximum ratings of the FQPF16N15 are: (1)drain-source voltage: 150V; (2)drain current: 11.6A; (3)gate-source voltage: ±25V; (4)single pulsed avalanche energy: 230mJ; (5)avalanche current: 11.6A; (6)repetitive avalanche energy: 5.3mJ; (7)peak diode recovery dv/dt: 6.0V/ns; (8)power dissipation: 53W; (9)operating and storage temerature range: -55 to +175; (10)maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300.
The following is about the electrical characteristics of FQPF16N15: (1)drain-source breakdown voltage: 150V min at VGS = 0V, ID = 250A; (2)breakdown voltage temperature coefficient: 0.17V/ typical; (3)zero gate voltage drain current: 1A at VDS = 150V, VGS = 0V; (4)gate-body leakage current, forward: 100nA at VGS = 25V, VDS = 0V; (5)gate-body leakage current, reverse: -100nA at VGS = -25V, VDS = 0V; (6)gate threshold voltage: 2.0V min and 4.0V max at VDS = VGS, ID = 250A; (7)static drain-source on-resistance: 0.123 typical and 0.16 max at VDS = 10V, ID = 5.8A.
Parameters: | Technical/Catalog Information | FQPF16N15 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 16.4A |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 5.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 910pF @ 25V |
| Power - Max | 53W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF16N15
FQPF16N15
|
FQPF16N15 Data Sheet
