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FQPF18N20V2YDTU

MOSFET 200V 18A N-Channel

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SeekIC No. : 00160636 Detail

FQPF18N20V2YDTU: MOSFET 200V 18A N-Channel

FQPF18N20V2YDTU Data Sheet

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Part Number:
FQPF18N20V2YDTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 18 A
Resistance Drain-Source RDS (on) : 0.14 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 18 A
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Resistance Drain-Source RDS (on) : 0.14 Ohms


Parameters:

Technical/Catalog InformationFQPF18N20V2YDTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs140 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 1080pF @ 25V
Power - Max40W
PackagingTube
Gate Charge (Qg) @ Vgs26nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF18N20V2YDTU
FQPF18N20V2YDTU



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