FQPF18N50V2

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 18 A
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Resistance Drain-Source RDS (on) : 0.225 Ohms


Features:

• 18A, 500V, R_DS(on) = 0.265 @V_GS = 10 V
• Low gate charge ( typical 42 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQP18N50V2	FQPF18N50V2	Units
VDSS	Drain-Source Voltage	500		V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	18	18	A
		12.1	12.1	A
IDM	Drain Current - Pulsed (Note 1)	72	72	A
VGSS	Gate-Source Voltage	± 30		V
EAS	Single Pulsed Avalanche Energy (Note 2)	330		mJ
IAR	Avalanche Current (Note 1)	18		A
EAR	Repetitive Avalanche Energy (Note 1)	25		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	208	69	W
		1.67	0.55	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +175		°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300		°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.83mH, I_AS = 18A, V_DD = 50V, R_G = 25 , Starting T_J = 25°C
3. I_SD 18A, di/dt 200A/s, V_DD BV_DSS, Starting T_J = 25°C


Description

These N-Channel enhancement mode power field effect transistors of FQPF18N50V2 are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF18N50V2 is well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Parameters:

Technical/Catalog Information	FQPF18N50V2
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	265 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds	3290pF @ 25V
Power - Max	69W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	55nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Other Names	FQPF18N50V2 FQPF18N50V2