Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220F
Continuous Drain Current
: 13.6 A
Resistance Drain-Source RDS (on)
: 0.074 Ohms
Features: * 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 V
* Low gate charge ( typical 14 nC)
* Low Crss ( typical 35 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature ratingSpecifications
| Symbol |
Parameter |
FQPF19N10L |
Units |
| VDSS |
Drain-Source Voltage |
100
|
V |
| ID |
Drain Current - Continuous (TC = 25)
- Continuous (TC= 100) |
13.6 |
A |
| 9.6 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
54.4 |
A |
| VGSS |
Gate-Source Voltage |
± 20 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
220 |
mJ |
| IAR |
Avalanche Current (Note 1) |
13.6 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
3.8 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
| PD |
Power Dissipation (TC = 25)
- Derate above 25 |
38 |
W |
| 0.25 |
W/ |
| TJ , TSTG |
Operating and Storage Temperature Range |
-55 to +175 |
|
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power field effect transistors of FQPF19N10L are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQPF19N10L has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF19N10L is well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.
Parameters: | Technical/Catalog Information | FQPF19N10L |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 13.6A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 6.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 870pF @ 25V |
| Power - Max | 38W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 18nC @ 5V |
| Package / Case | TO-220F |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF19N10L
FQPF19N10L
|
FQPF19N10L Data Sheet
