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FQPF1N50

MOSFET 500V N-Channel QFET

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SeekIC No. : 00163509 Detail

FQPF1N50: MOSFET 500V N-Channel QFET

FQPF1N50 Data Sheet

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Part Number:
FQPF1N50
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.9 A
Resistance Drain-Source RDS (on) : 9 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 0.9 A
Resistance Drain-Source RDS (on) : 9 Ohms


Parameters:

Technical/Catalog InformationFQPF1N50
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C900mA
Rds On (Max) @ Id, Vgs9 Ohm @ 450mA, 10V
Input Capacitance (Ciss) @ Vds 150pF @ 25V
Power - Max16W
PackagingTube
Gate Charge (Qg) @ Vgs5.5nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF1N50
FQPF1N50



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