FQPF22P10

MOSFET 100V P-Channel QFET

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FQPF22P10 Picture
SeekIC No. : 00147193 Detail

FQPF22P10: MOSFET 100V P-Channel QFET

floor Price/Ceiling Price

US $ .49~.79 / Piece | Get Latest Price
Part Number:
FQPF22P10
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.79
  • $.61
  • $.57
  • $.49
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : - 13.2 A
Resistance Drain-Source RDS (on) : 0.125 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Drain-Source Breakdown Voltage : - 100 V
Resistance Drain-Source RDS (on) : 0.125 Ohms
Continuous Drain Current : - 13.2 A


Features:

• -13.2A, -100V, RDS(on) = 0.125 @VGS = -10 V
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 160 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating





Specifications

Symbol Parameter FQPF22P10 Units
VDSS Drain-Source Voltage -100 V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
-13.2 A

-9.3

A
IDM Drain Current - Pulsed (Note 1) -52.3 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 710 mJ
IAR Avalanche Current (Note 1) -13.2 A
EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
45 W

0.3

W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6.1mH, IAS = -13.2A, VDD = -25V, RG = 25 , Starting TJ = 25°C
3. ISD -22A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25°C




Product Product status Eco Status Pricing* Package type Leads Packing method Package Drawing Package Marking Convention**
FQPF22P10 Full Production RoHS Compliant $0.83 TO-220F 3 RAIL TBD Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&E&3 (3-Digit Date Code)
Line 2: FQPF Line 3: 22P10
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FQPF22P10 is available. Click here for more information .





Description

These P-Channel enhancement mode power field effect transistors of FQPF22P10 are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF22P10 is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.






Parameters:

Technical/Catalog InformationFQPF22P10
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C13.2A
Rds On (Max) @ Id, Vgs125 mOhm @ 6.6A, 10V
Input Capacitance (Ciss) @ Vds 1500pF @ 25V
Power - Max45W
PackagingTube
Gate Charge (Qg) @ Vgs50nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF22P10
FQPF22P10



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