MOSFET 100V P-Channel QFET
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 100 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | - 13.2 A | ||
Resistance Drain-Source RDS (on) : | 0.125 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220F | Packaging : | Tube |
Symbol | Parameter | FQPF22P10 | Units |
VDSS | Drain-Source Voltage | -100 | V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-13.2 | A |
-9.3 |
A | ||
IDM | Drain Current - Pulsed (Note 1) | -52.3 | A |
VGSS | Gate-Source Voltage | ± 30 | V |
EAS | Single Pulsed Avalanche Energy (Note 2) | 710 | mJ |
IAR | Avalanche Current (Note 1) | -13.2 | A |
EAR | Repetitive Avalanche Energy (Note 1) | 4.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) | -6.0 | V/ns |
PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
45 | W |
0.3 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range | -55 to +175 | °C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing | Package Marking Convention** |
---|---|---|---|---|---|---|---|---|
FQPF22P10 | Full Production | RoHS Compliant | $0.83 | TO-220F | 3 | RAIL | TBD | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FQPF Line 3: 22P10 |
* Fairchild 1,000 piece Budgetary Pricing |
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Package marking information for product FQPF22P10 is available. Click here for more information . |
These P-Channel enhancement mode power field effect transistors of FQPF22P10 are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF22P10 is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Technical/Catalog Information | FQPF22P10 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 13.2A |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 6.6A, 10V |
Input Capacitance (Ciss) @ Vds | 1500pF @ 25V |
Power - Max | 45W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 50nC @ 10V |
Package / Case | TO-220F |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQPF22P10 FQPF22P10 |