FQPF34N20

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 17.5 A
Resistance Drain-Source RDS (on) : 0.075 Ohms


Features:

• 17.5A, 200V, R_DS(on) = 0.075Ω @V_GS = 10 V
• Low gate charge ( typical 60 nC)
• Low C_rss ( typical 55 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol	Parameter	FQPF34N20	Units
VDSS	Drain-Source Voltage	200	V
ID	Drain Current - Continuous (TC = 25°C)                       - Continuous (TC  = 100°C)	17.5	A
		11	A
IDM	Drain Current - Pulsed                 (Note 1)	70	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy         (Note 2)	640	mJ
IAR	Avalanche Current                      (Note 1)	17.5	A
EAR	Repetitive Avalanche Energy            (Note 1)	5.5	mJ
dv/dt	Peak Diode Recovery dv/dt              (Note 3)	5.5	V/ns
PD	Power Dissipation (TC = 25°C)                            - Derate above 25°C	55	W
		0.44	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQPF34N20 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology of FQPF34N20 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF34N20 is well suited for high efficiency switching DC/DC converters, and DC-AC converters for uniteterrupted power supply,motor control.

Parameters:

Technical/Catalog Information	FQPF34N20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	17.5A
Rds On (Max) @ Id, Vgs	75 mOhm @ 8.75A, 10V
Input Capacitance (Ciss) @ Vds	3100pF @ 25V
Power - Max	55W
Packaging	Tube
Gate Charge (Qg) @ Vgs	78nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF34N20 FQPF34N20