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FQPF5N50CF

Features: • 5A, 500V, RDS(on) = 1.55 @VGS = 10 V• Low gate charge ( typical 18nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQPF5N50CF Units VDSS Drain-Source V...

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SeekIC No. : 004343339 Detail

FQPF5N50CF: Features: • 5A, 500V, RDS(on) = 1.55 @VGS = 10 V• Low gate charge ( typical 18nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Improved dv/d...

FQPF5N50CF Data Sheet

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Part Number:
FQPF5N50CF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 5A, 500V, RDS(on) = 1.55 @VGS = 10 V
• Low gate charge ( typical 18nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol
Parameter
FQPF5N50CF
Units
VDSS Drain-Source Voltage
500
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
5
A

2.9
A
IDM Drain Current - Pulsed (Note 1)
20
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
300
mJ
IAR Avalanche Current (Note 1)
5
A
EAR Repetitive Avalanche Energy (Note 1)
7.3
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
38
W

0.3

W/°C

TJ, TSTG Operating and Storage Temperature Range
-55 to +175
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.5 mH, IAS = 5A, VDD = 50V, RG = 25 , Starting TJ = 25°C
3. ISD 5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C


Description

These N-Channel enhancement mode power field effect transistors of FQPF5N50CF are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF5N50CF is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.




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